High-performance GaAs-based metal–oxide–semiconductor heterostructure field-effect transistors with atomic-layer-deposited Al2O3gate oxide and in situ AlN passivation by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

High-performance GaAs-based metal–oxide–semiconductor heterostructure field-effect transistors with atomic-layer-deposited Al2O3gate oxide and in situ AlN passivation by metalorganic chemical vapor deposition

Published:2014-09-11 Issue:10 Volume:7 Page:106502
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Aoki Takeshi,Fukuhara Noboru,Osada Takenori,Sazawa Hiroyuki,Hata Masahiko,Inoue Takayuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/7/i=10/a=106502/pdf

Reference34 articles.

1. Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications

2. 30nm enhancement-mode In0.53Ga0.47As MOSFETs on Si substrates grown by MOCVD exhibiting high transconductance and low on-resistance

3. High-Performance Inverted $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ MOSHEMTs on a GaAs Substrate With Regrown Source/Drain by MOCVD

4. High Mobility III-V MOSFETs For RF and Digital Applications

5. Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$

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1. Optical and nano-mechanical characterization of c-axis oriented AlN film;Optical Materials;2022-07

2. Ellipsometric investigation of AlN thin films - Effect of temperature and doping with Ti,Cr;Optical Materials;2021-08

3. Anisotropic optical properties of a-axis AlN films: a spectroscopic ellipsometry study;OSA Continuum;2018-11-30

4. Electron trap states at InGaAs/oxide interfaces under inversion through constant Fermi-levelab initiomolecular dynamics;Journal of Physics: Condensed Matter;2017-11-24

5. Interfacial Ga-As suboxide: Structural and electronic properties;Applied Physics Letters;2015-07-20