Relationship between misfit-dislocation formation and initial threading-dislocation density in GaInN/GaN heterostructures-Reference-Cited by-同舟云学术

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Relationship between misfit-dislocation formation and initial threading-dislocation density in GaInN/GaN heterostructures

Published:2015-10-01 Issue:11 Volume:54 Page:115501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Iwaya Motoaki,Yamamoto Taiji,Iida Daisuke,Kondo Yasunari,Sowa Mihoko,Matsubara Hiroyuki,Ishihara Koji,Takeuchi Tetsuya,Kamiyama Satoshi,Akasaki Isamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=11/a=115501/pdf

Reference19 articles.

1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

2. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

3. Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate

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1. Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN;Acta Materialia;2024-09

2. Local augmentation of phonon transport at GaInN/GaN heterointerface by introducing a graded variation of InN mole fraction;Applied Physics Letters;2024-07-01

3. Insensitivity of Grain boundary Stress Fields to Area Variations;physica status solidi (b);2024-06-22

4. Nano-indentation study of dislocation evolution in GaN-based laser diodes;Discover Nano;2024-03-07

5. Transition from Screw-Type to Edge-Type Misfit Dislocations at InGaN/GaN Heterointerfaces;Crystals;2023-06-28

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