Plasma-enhanced chemical-vapor deposition of silicon nitride film for high resistance to potential-induced degradation-Reference-Cited by-同舟云学术

Plasma-enhanced chemical-vapor deposition of silicon nitride film for high resistance to potential-induced degradation

Published:2015-07-10 Issue:8S1 Volume:54 Page:08KD12
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mishina Ken,Ogishi Atsufumi,Ueno Kiyoshi,Jonai Sachiko,Ikeno Norihiro,Saruwatari Tetsuya,Hara Kohjiro,Ogura Atsushi,Yamazaki Toshiharu,Doi Takuya,Shinohara Makoto,Masuda Atsushi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=8S1/a=08KD12/pdf

Reference31 articles.

1. Potential Induced Degradation of solar cells and panels

2. On the mechanism of potential-induced degradation in crystalline silicon solar cells

3. Micro Structural Root Cause Analysis of Potential Induced Degradation in c-Si Solar Cells

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