Temperature dependence of current gain in 4H-SiC bipolar junction transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/54/i=4S/a=04DP13/pdf
Reference30 articles.
1. High performance of high-voltage 4H-SiC Schottky barrier diodes
2. An overview of Cree silicon carbide power devices
3. Power Conversion With SiC Devices at Extremely High Ambient Temperatures
4. Comparison of Static and Switching Characteristics of 1200 V 4H-SiC BJT and 1200 V Si-IGBT
5. Design and technology considerations for SiC bipolar devices: BJTs, IGBTs, and GTOs
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1. Transport Characteristics of Interfacial Charge in SiC Semiconductor–Epoxy Resin Packaging Materials;Frontiers in Chemistry;2022-04-26
2. Temperature Dependence of Conductivity Modulation in SiC Bipolar Junction Transistors;IEEE Transactions on Electron Devices;2020-04
3. Demonstration of Conductivity Modulation in SiC Bipolar Junction Transistors With Reduced Base Spreading Resistance;IEEE Transactions on Electron Devices;2019-11
4. Determination of Surface Recombination Velocity From Current–Voltage Characteristics in SiC p-n Diodes;IEEE Transactions on Electron Devices;2018-11
5. Impacts of Finger Numbers on ON-State Characteristics in Multifinger SiC BJTs With Low Base Spreading Resistance;IEEE Transactions on Electron Devices;2018-07
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