Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing $(10\bar{1}0)$ m-plane GaN substrates-Reference-Cited by-同舟云学术

Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing $(10\bar{1}0)$ m-plane GaN substrates

Published:2018-10-16 Issue:11 Volume:11 Page:111003
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Fu Houqiang,Zhang Xiaodong,Fu Kai,Liu Hanxiao,Alugubelli Shanthan R.,Huang Xuanqi,Chen Hong,Baranowski Izak,Yang Tsung-Han,Xu Ke,Ponce Fernando A.,Zhang Baoshun,Zhao Yuji

Funder

Advanced Research Projects Agency - Energy

National Science Foundation

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/11/i=11/a=111003/pdf

Reference39 articles.

1. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

2. High breakdown voltage p-n diodes on GaN on sapphire by MOCVD

3. GaN-on-Si Vertical Schottky and p-n Diodes

4. Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes

5. High Voltage Vertical GaN p-n Diodes With Avalanche Capability

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of drain-induced channel effects in vertical GaN junction field-effect transistors;Semiconductor Science and Technology;2024-05-23

2. Modeling Framework to Compare High Voltage Vertical GaN PN and Merged PN-Schottky Diodes;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

3. Compact Modeling of Power GaN Fin-JFETs I-V Characteristics using ASM-HEMT Model;2024 IEEE Texas Power and Energy Conference (TPEC);2024-02-12

4. A Review on Reverse-Bias Leakage Current Transport Mechanisms in Metal/GaN Schottky Diodes;Transactions on Electrical and Electronic Materials;2024-02-03

5. Self-assembled metal-oxo clusters for sensitive and low-powered ultraviolet photodetectors;Journal of Materials Chemistry A;2024