High-speed and highly efficient Si optical modulator with strained SiGe layer-Reference-Cited by-同舟云学术

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High-speed and highly efficient Si optical modulator with strained SiGe layer

Published:2018-02-05 Issue:3 Volume:11 Page:032201
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Fujikata Junichi,Noguchi Masataka,Kim Younghyun,Han Jaehoon,Takahashi Shigeki,Nakamura Takahiro,Takenaka Mitsuru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/11/i=3/a=032201/pdf

Reference27 articles.

1. Silicon optical modulators

2. Micrometre-scale silicon electro-optic modulator

3. Strong quantum-confined Stark effect in germanium quantum-well structures on silicon

4. Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators

5. Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A PAM-4 100 Gbps Single-Drive Strained SiGe Optical Lumped Mach-Zehnder Modulator for O-Band Application;IEEE Journal of Quantum Electronics;2023-12

2. Electro-optic modulation in integrated photonics;Journal of Applied Physics;2021-07-07

3. Heterogeneously-Integrated Optical Phase Shifters for Next-Generation Modulators and Switches on a Silicon Photonics Platform: A Review;Micromachines;2021-05-28

4. High-efficiency and high-speed narrow-width MOS capacitor-type Si optical modulator with TM mode excitation;Optics Express;2021-03-16

5. Silicon Photonics Using Heterogeneous Integration for Society 5.0;Vacuum and Surface Science;2021-02-10

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