Low-temperature diffusion assisted by femtosecond laser-induced modifications at Ni/SiC interface-Reference-Cited by-同舟云学术

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Low-temperature diffusion assisted by femtosecond laser-induced modifications at Ni/SiC interface

Published:2017-12-27 Issue:1 Volume:11 Page:016502
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Okada Tatsuya,Tomita Takuro,Ueki Tomoyuki,Hashimoto Takuya,Kawakami Hiroki,Fuchikami Yuki,Hisazawa Hiromu,Tanaka Yasuhiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/11/i=1/a=016502/pdf

Reference24 articles.

1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy

2. Material science and device physics in SiC technology for high-voltage power devices

3. Investigation of thin‐film Ni/single‐crystal SiC interface reaction

4. High‐temperature ohmic contact to n‐type 6H‐SiC using nickel

5. Nickel based ohmic contacts on SiC

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of ohmic Ni electrodes on femtosecond laser-modified 4H–SiC surface;Applied Physics A;2020-06-18

2. Femtosecond-laser-induced modifications on a 4H-SiC surface and their application to low-temperature diffusion at the Ni/SiC interface;Japanese Journal of Applied Physics;2018-10-02

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