Properties of perpendicular-anisotropy magnetic tunnel junctions fabricated over the bottom electrode contact-Reference-Cited by-同舟云学术

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Properties of perpendicular-anisotropy magnetic tunnel junctions fabricated over the bottom electrode contact

Published:2015-03-11 Issue:4S Volume:54 Page:04DM06
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Miura Sadahiko,Honjo Hiroaki,Kinoshita Keizo,Tokutome Keiichi,Koike Hiroaki,Ikeda Shoji,Endoh Tetsuo,Ohno Hideo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=4S/a=04DM06/pdf

Reference31 articles.

1. Six-input lookup table circuit with 62% fewer transistors using nonvolatile logic-in-memory architecture with series/parallel-connected magnetic tunnel junctions

2. Progress of STT-MRAM technology and the effect on normally-off computing systems

3. Low Power Magnetic Full-Adder Based on Spin Transfer Torque MRAM

4. A Fully Functional 64 Mb DDR3 ST-MRAM Built on 90 nm CMOS Technology

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Overview of Nonvolatile Emerging Memories— Spintronics for Working Memories;IEEE Journal on Emerging and Selected Topics in Circuits and Systems;2016-06

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