Temperature dependence of forward characteristics for ultrahigh-voltage SiC p–i–n diodes with a long carrier lifetime
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/54/i=9/a=098004/pdf
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1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
2. SiC power-switching devices-the second electronics revolution?
3. Material science and device physics in SiC technology for high-voltage power devices
4. 12-19 kV 4H-SiC pin diodes with low power loss
5. High power 4H–SiC pin diodes (10kV class) with record high carrier lifetime
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1. The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers;APL Materials;2023-03-01
2. High-voltage SiC power devices for improved energy efficiency;Proceedings of the Japan Academy, Series B;2022-04-11
3. Low V F 4H-SiC N-i-P diodes using newly developed low-resistivity p-type substrates;Japanese Journal of Applied Physics;2020-02-28
4. Effects of Neutron Irradiation on the Static and Switching Characteristics of High-Voltage 4H-SiC p-type Gate Turn-off Thyristors;IEEE Transactions on Electron Devices;2019-09
5. Current status and perspectives of ultrahigh-voltage SiC power devices;Materials Science in Semiconductor Processing;2018-05
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