Structural and optical properties of AlN grown by solid source solution growth method-Reference-Cited by-同舟云学术

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Structural and optical properties of AlN grown by solid source solution growth method

Published:2015-07-06 Issue:8 Volume:54 Page:085501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kangawa Yoshihiro,Suetsugu Hiroshige,Knetzger Michael,Meissner Elke,Hazu Kouji,Chichibu Shigefusa F.,Kajiwara Takashi,Tanaka Satoru,Iwasaki Yosuke,Kakimoto Koichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=8/a=085501/pdf

Reference22 articles.

1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

2. Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes

3. Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

4. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

5. Seeded growth of AlN on N- and Al-polar AlN seeds by physical vapor transport

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