Analysis on the variable junction leakage in MOS transistors due to interaction between two traps
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/54/i=3/a=034101/pdf
Reference13 articles.
1. RTS-like fluctuation in Gate Induced Drain Leakage current of Saddle-Fin type DRAM cell transistor
2. Mechanism of random telegraph noise in junction leakage current of metal-oxide-semiconductor field-effect transistor
3. Characterization of an Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage Current of DRAM Cell Transistors
4. A new recombination model for device simulation including tunneling
5. A new analytical diode model including tunneling and avalanche breakdown
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. RTS modeling, simulation and parameter extraction;Random Telegraph Signals in Semiconductor Devices;2017
2. Extraction of Distance Between Interface Trap and Oxide Trap from Random Telegraph Noise in Gate-Induced Drain Leakage;Journal of Nanoscience and Nanotechnology;2016-05-01
3. Characterizing traps causing random telegraph noise during trap-assisted tunneling gate-induced drain leakage;Solid-State Electronics;2015-07
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