Investigations on crack generation mechanism and crack reduction by buffer layer insertion in thermal-plasma-jet crystallization of amorphous silicon films on glass substrate-Reference-Cited by-同舟云学术

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Investigations on crack generation mechanism and crack reduction by buffer layer insertion in thermal-plasma-jet crystallization of amorphous silicon films on glass substrate

Published:2014-11-18 Issue:1S Volume:54 Page:01AE05
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tanaka Keisuke,Hayashi Shohei,Morisaki Seiji,Higashi Seiichiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=1S/a=01AE05/pdf

Reference31 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Stable ZnO thin film transistors by fast open air atomic layer deposition

3. Recent Progress in Organic Electronics: Materials, Devices, and Processes

4. Inkjet printing of single-crystal films

5. XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFT's

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1. Hybrid lithium tantalite-silicon integrated photonics platform for electro-optic modulation;Optics Letters;2023-11-21

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