100-nm-size ferroelectric-gate field-effect transistor with 108-cycle endurance
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/54/i=8/a=088004/pdf
Reference37 articles.
1. Metal–Ferroelectric–Insulator–Semiconductor Memory FET With Long Retention and High Endurance
2. Pt/SrBi2Ta2O9/Hf-Al-O/Si Field-Effect-Transistor with Long Retention Using Unsaturated Ferroelectric Polarization Switching
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