Fabrication of source and drain regions of self-aligned ZrInZnO thin-film transistors using a solution of tin and poly(propylene carbonate)-Reference-Cited by-同舟云学术

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Fabrication of source and drain regions of self-aligned ZrInZnO thin-film transistors using a solution of tin and poly(propylene carbonate)

Published:2015-09-07 Issue:10 Volume:54 Page:106501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tu Huynh Thi Cam,Inoue Satoshi,Nishioka Kiyoshi,Fujimoto Nobutaka,Karashima Shuichi,Shimoda Tatsuya

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=10/a=106501/pdf

Reference38 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

3. 22.1: Invited Paper: Technological Challenges for Large-Size AMOLED Display

4. 42.4L: Late-News Paper: 4 inch QVGA AMOLED Driven by the Threshold Voltage Controlled Amorphous GIZO (Ga[sub 2]O[sub 3]-In[sub 2]O[sub 3]-ZnO) TFT

5. 42.2: World's Largest (15-inch) XGA AMLCD Panel Using IGZO Oxide TFT

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1. Formation of F-Doped Offset Region for Spray Pyrolyzed Self-Aligned Coplanar Amorphous Zinc–Tin–Oxide Thin-Film Transistor by NF₃ Plasma Treatment;IEEE Transactions on Electron Devices;2021-03

2. The highly electrical performances of flexible indium-zinc-oxide based thin-film transistors on stability improvement by passivation layer;Microelectronic Engineering;2017-06

3. High-performance calcium-doped zinc oxide thin-film transistors fabricated on glass at low temperature;Japanese Journal of Applied Physics;2016-03-17

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