Comprehensive studies on the accuracy of trap characterization by using advanced random telegraph noise simulator
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/54/i=4S/a=04DC14/pdf
Reference30 articles.
1. Statistical characterization of trap position, energy, amplitude and time constants by RTN measurement of multiple individual traps
2. Direct observation of RTN-induced SRAM failure by accelerated testing and its application to product reliability assessment
3. Random Telegraph Signal Statistical Analysis using a Very Large-scale Array TEG with 1M MOSFETs
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3. Impact of Varying Strain Energy in Oxide on Random Telegraph Noise and Associated Time Constants in Silicon Nanowire pMOSFETs;IEEE Transactions on Electron Devices;2019-03
4. Grain-boundary-limited carrier mobility in polycrystalline silicon with negative temperature dependence: modeling carrier conduction through grain-boundary traps based on trap-assisted tunneling;Japanese Journal of Applied Physics;2019-01-22
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