Molecular beam epitaxial growth of intermediate-band materials based on GaAs:N δ-doped superlattices-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Molecular beam epitaxial growth of intermediate-band materials based on GaAs:N δ-doped superlattices

Published:2015-07-10 Issue:8S1 Volume:54 Page:08KA07
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Suzuki Tomoya,Osada Kazuki,Yagi Shuhei,Naitoh Shunya,Shoji Yasushi,Hijikata Yasuto,Okada Yoshitaka,Yaguchi Hiroyuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=8S1/a=08KA07/pdf

Reference31 articles.

1. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells

2. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

3. A metallic intermediate band high efficiency solar cell

4. Third generation photovoltaics: Ultra-high conversion efficiency at low cost

5. Production of Photocurrent due to Intermediate-to-Conduction-Band Transitions: A Demonstration of a Key Operating Principle of the Intermediate-Band Solar Cell

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of carrier-blocking barrier height on two-step photocurrent generation in dilute nitride intermediate band solar cells;Japanese Journal of Applied Physics;2023-03-27

2. Dilute nitride III-V nanowires for high-efficiency intermediate-band photovoltaic cells: Materials requirements, self-assembly methods and properties;Progress in Crystal Growth and Characterization of Materials;2020-11

3. Growth and evaluation of GaAsN films with different N distribution grown by atomic layer epitaxy method;Japanese Journal of Applied Physics;2020-02-28

4. Intermediate band formation in a δ -doped like QW superlattices of GaAs/Al x Ga 1−x As for solar cell design;Superlattices and Microstructures;2018-03

5. Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al, Ga)As quantum wells;Applied Physics Letters;2017-05-15

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3