Open circuit voltage decay characteristics of 4H-SiC p–i–n diode with carbon implantation-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Open circuit voltage decay characteristics of 4H-SiC p–i–n diode with carbon implantation

Published:2014-01-01 Issue:4S Volume:53 Page:04EP08
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tanaka Atsushi,Nakayama Koji,Asano Katsunori,Miyazawa Tetsuya,Tsuchida Hidekazu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference28 articles.

1. 16 kV, 1 cm², 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications

2. 15 kV, Large Area (1 cm²), 4H-SiC p-Type Gate Turn-Off Thyristors

3. A 13 kV 4H-SiC n-Channel IGBT with Low R_diff,onand Fast Switching

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface recombination velocities for 4H–SiC: Dependence of excited carrier concentration and surface passivation;Materials Science in Semiconductor Processing;2024-02

2. 10 kV SiC thyristor for High Voltage Pulsed Power Generators;2023 IEEE Applied Power Electronics Conference and Exposition (APEC);2023-03-19

3. A novel 3.3 kV 4H-SiC trench PiN with enhanced conductance modulation effect;Semiconductor Science and Technology;2022-06-07

4. 13 kV SiC-DMOSFETs and body diodes for HVDC MMC converters;Japanese Journal of Applied Physics;2021-12-22

5. Carrier recombination in SrTiO3 single crystals: impacts of crystal faces and Nb doping;Journal of Physics D: Applied Physics;2021-06-16

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP