Effect of ultrathin AlN spacer on electronic properties of GaN/SiC heterojunction bipolar transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference25 articles.
1. 1800 V NPN bipolar junction transistors in 4H-SiC
2. 4H–SiC BJTs with current gain of 110
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4. Large Area 1200 V SiC BJTs with β>100 and ρON<3 mΩcm2
5. Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors
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