Surface assessment after removing III–V layer on III–V/silicon-on-insulator wafer fabricated by plasma activated bonding-Reference-Cited by-同舟云学术

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Surface assessment after removing III–V layer on III–V/silicon-on-insulator wafer fabricated by plasma activated bonding

Published:2014-10-23 Issue:11 Volume:53 Page:118003
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Suzuki Junichi,Hayashi Yusuke,Kuno Yuki,Kang JoonHyun,Amemiya Tomohiro,Nishiyama Nobuhiko,Arai Shigehisa

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=11/a=118003/pdf

Reference19 articles.

1. On-chip natural assembly of silicon photonic bandgap crystals

2. The Past, Present, and Future of Silicon Photonics

3. Si Photonic Wire Waveguide Devices

4. High-throughput silicon nanophotonic wavelength-insensitive switch for on-chip optical networks

5. 250 Gbps 10-channel WDM silicon photonics receiver

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain relaxation in semiconductor wafer bonding;Japanese Journal of Applied Physics;2021-05-01

2. Highly efficient double-taper-type coupler between III–V/silicon-on-insulator hybrid device and silicon waveguide;Japanese Journal of Applied Physics;2018-08-21

3. Introduction of AlInAs-oxide current-confinement structure into GaInAsP/SOI hybrid Fabry–Pérot laser;Japanese Journal of Applied Physics;2017-05-30

4. GaInAsP/silicon-on-insulator hybrid laser with ring-resonator-type reflector fabricated by N2plasma-activated bonding;Japanese Journal of Applied Physics;2016-07-19

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