Theoretical study on stochastic defect generation in chemically amplified resist process for extreme ultraviolet lithography
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/53/i=6/a=066504/pdf
Reference39 articles.
1. Extreme Ultraviolet Lithography Development in the United States
2. EUV Resist Process Performance Investigations on the NXE3100 Full Field Scanner
3. Resist Materials and Processes for Extreme Ultraviolet Lithography
4. EUV resist materials for 20nm and below half-pitch applications
5. From performance validation to volume introduction of ASML's NXE platform
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2. Effect of Alternative Developer Solutions on EUVL Patterning;Journal of Photopolymer Science and Technology;2022-12-16
3. Alternative developer solution/process for EUV lithography: ethyltrimethylammonium hydroxide (ETMAH);Extreme Ultraviolet (EUV) Lithography XII;2021-03-16
4. Application of ethyltrimethylammonium hydroxide (ETMAH) as an alternative developer solution/process for semiconductor lithography;Japanese Journal of Applied Physics;2021-02-22
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