Low-temperature layer transfer of midair cavity silicon films to a poly(ethylene terephthalate) substrate by meniscus force
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Development of high-yield layer transfer process of single-crystalline silicon thin films on plastic substrate and its application to multi-functional device integration;Japanese Journal of Applied Physics;2020-02-04
2. Single-Crystalline Si-CMOS Circuit Fabrication on Polyethylene Terephthalate Substrate by Meniscus Force-Mediated Layer Transfer;IEEE Journal of the Electron Devices Society;2019
3. Formation of silicon-on-insulator layer with midair cavity for meniscus force-mediated layer transfer and high-performance transistor fabrication on glass;Japanese Journal of Applied Physics;2015-07-02
4. Meniscus-force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substrates;Japanese Journal of Applied Physics;2015-03-20
5. Fabrication of N-channel single crystalline silicon (100) thin-film transistors on glass substrate by meniscus force-mediated layer transfer technique;Japanese Journal of Applied Physics;2014-09-16
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