An analytical approach for the determination of the lateral trap position in ultra-scaled MOSFETs-Reference-Cited by-同舟云学术

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An analytical approach for the determination of the lateral trap position in ultra-scaled MOSFETs

Published:2014-01-01 Issue:4S Volume:53 Page:04EC22
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Illarionov Yury Yu.,Bina Markus,Tyaginov Stanislav E.,Grasser Tibor

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference30 articles.

1. The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps

2. The understanding of multi-level RTN in trigate MOSFETs through the 2D profiling of traps and its impact on SRAM performance: A new failure mechanism found

3. RTS amplitudes in decananometer MOSFETs: 3-D simulation study

4. Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. RTS modeling, simulation and parameter extraction;Random Telegraph Signals in Semiconductor Devices;2017

2. Frequency jumps in single chip microwave LC oscillators;Applied Physics Letters;2014-12-15

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