An analytical approach for the determination of the lateral trap position in ultra-scaled MOSFETs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference30 articles.
1. The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps
2. The understanding of multi-level RTN in trigate MOSFETs through the 2D profiling of traps and its impact on SRAM performance: A new failure mechanism found
3. RTS amplitudes in decananometer MOSFETs: 3-D simulation study
4. Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress
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1. RTS modeling, simulation and parameter extraction;Random Telegraph Signals in Semiconductor Devices;2017
2. Frequency jumps in single chip microwave LC oscillators;Applied Physics Letters;2014-12-15
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