Fabrication and characteristics of high-performance and high-stability aluminum-doped zinc oxide thin-film transistors-Reference-Cited by-同舟云学术

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Fabrication and characteristics of high-performance and high-stability aluminum-doped zinc oxide thin-film transistors

Published:2014-01-01 Issue:4S Volume:53 Page:04EJ07
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shan Dongfang,Han Dedong,Huang Fuqing,Tian Yu,Zhang Suoming,Qi Lin,Cong Yingying,Zhang Shengdong,Zhang Xing,Wang Yi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference30 articles.

1. Thermal Analysis of Degradation in Ga2O3–In2O3–ZnO Thin-Film Transistors

2. Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors

3. Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor

4. Role of donor defects in enhancing ferromagnetism of Cu-doped ZnO films

5. Carbothermal reduction vapor phase transport growth of ZnO nanostructures: Effects of various carbon sources

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1. Preparation Of ZnO/Co 3 O 4 Hollow Microsphere By Pollen‐biological Template And Its Application In Photocatalytic Degradation;ChemistrySelect;2019-11-22

2. Magnetron-sputtered high performance Y-doped ZnO thin film transistors fabricated at room temperature;Materials Science in Semiconductor Processing;2017-11

3. Studies on fully transparent Al–Sn–Zn–O thin-film transistors fabricated on glass at low temperature;Japanese Journal of Applied Physics;2015-02-09

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