Effects of abnormal cell-to-cell interference on p-type floating gate and control gate NAND flash memory-Reference-Cited by-同舟云学术

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Effects of abnormal cell-to-cell interference on p-type floating gate and control gate NAND flash memory

Published:2014-01-01 Issue:4S Volume:53 Page:04ED12
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Yong Jun,Kang Jun Geun,Lee Byungin,Cho Gyu-Seog,Park Sung-Kye,Choi Woo Young

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference31 articles.

1. 25nm 64Gb MLC NAND technology and scaling challenges invited paper

2. Memory Technologies for sub-40nm Node

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1. A Novel Structure Between WL Spaces to Improve the Retention Characteristics in 3D NAND Flash;IEEE Access;2024

2. Scaling Challenges of Floating Gate Non-Volatile Memory and Graphene as the Future Flash Memory Device: A Review;Journal of Nanoelectronics and Optoelectronics;2019-09-01

3. Improvement of cell reliability by floating gate implantation on 1Xnm NAND flash memory;Solid-State Electronics;2018-08

4. Effects of Asymmetric String Structure on Word-Line Interference in the Vertical NAND Flash Memory Devices;Journal of Nanoscience and Nanotechnology;2017-06-01

5. Enhancement of the electrical characteristics for vertical NAND flash memory devices using a modified array structure;Japanese Journal of Applied Physics;2017-03-08

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