Expansion of lattice constants of aluminum nitride thin film prepared on sapphire substrate by ECR plasma sputtering method-Reference-Cited by-同舟云学术

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Expansion of lattice constants of aluminum nitride thin film prepared on sapphire substrate by ECR plasma sputtering method

Published:2014-10-24 Issue:11S Volume:53 Page:11RA11
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kaneko Satoru,Torii Hironori,Amazawa Takao,Ito Takeshi,Yasui Manabu,Kurouchi Masahito,Fukushima Akinori,Tokumasu Takashi,Lee Seughwan,Park Sungkyun,Takikawa Hirofumi,Yoshimoto Mamoru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=11S/a=11RA11/pdf

Reference30 articles.

1. Band-edge photoluminescence of AlN epilayers

2. Near-band-edge photoluminescence of wurtzite-type AlN

3. Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy

4. Band structure and fundamental optical transitions in wurtzite AlN

5. Influence of surface oxidation on the valence electron energy-loss spectrum of wurtzite aluminum nitride

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization and ohmic contact properties of indium tin-oxide films prepared on p-type GaN using electron-cyclotron-resonance plasma-sputter deposition;Thin Solid Films;2024-08

2. Optoelectronic properties of the two-dimensional h-BN/h-AlN superlattice by first-principles calculation;Computational Materials Science;2023-03

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