Effect of amide bond in gate dielectric polymers on memory performance of organic field-effect transistors-Reference-Cited by-同舟云学术

Effect of amide bond in gate dielectric polymers on memory performance of organic field-effect transistors

Published:2014-04-28 Issue:5S3 Volume:53 Page:05HB13
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sakai Heisuke,Cheong Hea-Jeong,Kodzasa Takehito,Tokuhisa Hideo,Tokoro Kazuhiko,Yoshida Manabu,Ikoga Taihei,Nakamura Kazuki,Kobayashi Norihisa,Uemura Sei

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=5S3/a=05HB13/pdf

Reference26 articles.

1. Polymer electronic memories: Materials, devices and mechanisms

2. Organic materials for printed electronics

3. Organic field effect transistors with dipole-polarized polymer gate dielectrics for control of threshold voltage

4. Spin-cast composite gate insulation for low driving voltages and memory effect in organic field-effect transistors

5. An organic nonvolatile memory using space charge polarization of a gate dielectric

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2. Effect of Dielectric Behavior of Gate Dielectric Polymers on Memory Characteristics of Organic Field-effect Transistors;Journal of Photopolymer Science and Technology;2014

3. Ferroelectric-gate thin-film transistors with Bi3.15Nd0.85Ti3O12 gate insulators on LaNiO3-buffered Si substrates;RSC Adv.;2014