Ammonia-Annealed SiO2Films for Thin-Gate Insulator-Reference-Cited by-同舟云学术

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Ammonia-Annealed SiO2Films for Thin-Gate Insulator

Published:1982-01-01 Issue:S1 Volume:21 Page:153
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kato Ichiro,Ito Takashi,Inoue Shin-ichi,Nakamura Tetsuo,Ishikawa Hajime

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Si(001) surface oxidation by N2O;Journal of Non-Crystalline Solids;2002-05

2. Characterization of flicker noise in and nitrided MOSFETs due to low-energy backsurface gettering;Semiconductor Science and Technology;1998-07-01

3. Stoichiometry reversal and depth-profiling in the growth of thin oxynitride films with N2O on Si(100) surfaces;Journal of Electron Spectroscopy and Related Phenomena;1996-05

4. Microwave plasma nitridation of Si(100), Ge(100), and Si1−xGex surfaces: A comparative study;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-05

5. The use of oxynitrides for the fabrication of buried contact silicon solar cells;Solar Energy Materials and Solar Cells;1996-04

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