Characterization of flicker noise in and nitrided MOSFETs due to low-energy backsurface gettering-Reference-Cited by-同舟云学术

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Characterization of flicker noise in and nitrided MOSFETs due to low-energy backsurface gettering

Published:1998-07-01 Issue:7 Volume:13 Page:792-795
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Surya Charles,Wang W,Lai P T

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Field and temperature acceleration of time-dependent dielectric breakdown for reoxidized-nitrided and fluorinated oxides

2. Role of SiN Bond Formed by N2O-Oxynitridation for Improving Dielectric Properties of Ultrathin SiO2Films

3. Study of the composition of thin dielectrics grown on Si in a pure N2O ambient

4. Mobility improvement of n-MOSFET's with nitrided gate oxide by backsurface Ar/sup +/ bombardment

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preface;Specular Gloss;2008

2. References;Specular Gloss;2008

3. Method of observation of low density interface states by means of X-ray photoelectron spectroscopy under bias and passivation by cyanide ions;Applied Surface Science;2006-08

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