Temperature-dependent minority carrier lifetime of crystalline silicon wafers passivated by high quality amorphous silicon oxide
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=4S/a=04ES04/pdf
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1. High-efficiency Silicon Heterojunction Solar Cells: A Review
2. 20.1%-efficient crystalline silicon solar cell with amorphous silicon rear-surface passivation
3. Application of Spectroscopic Ellipsometry and Infrared Spectroscopy for the Real-Time Control and Characterization of a-Si:H Growth in a-Si:H/c-Si Heterojunction Solar Cells
4. Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment
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1. Investigation of silicon surface passivation by sputtered amorphous silicon and thermally evaporated molybdenum oxide films using temperature- and injection-dependent lifetime spectroscopy;Semiconductor Science and Technology;2020-10-21
2. Si surface passivation by using triode-type plasma-enhanced chemical vapor deposition with thermally energized film-precursors;The European Physical Journal Applied Physics;2020-01
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