Studies on resistive hysteresis characteristics of metal organic decomposition-derived BaTiO3thin films prepared under various annealing conditions and related switching endurance properties-Reference-Cited by-同舟云学术

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Studies on resistive hysteresis characteristics of metal organic decomposition-derived BaTiO3thin films prepared under various annealing conditions and related switching endurance properties

Published:2016-09-15 Issue:10S Volume:55 Page:10TA09
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sugie Toshiyuki,Maejima So,Yamashita Kaoru,Noda Minoru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=10S/a=10TA09/pdf

Reference31 articles.

1. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

2. Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

3. Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices

4. Resistive hystersis effects in perovskite oxide-based heterostructure junctions

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystal structure and ferroelectric polarization of tetragonal (Bi1/2Na1/2)TiO3–12BaTiO3;Japanese Journal of Applied Physics;2018-10-03

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