Effect of III–V on insulator structure on quantum well intermixing
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=4S/a=04EH13/pdf
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Monolithic integration of electro-absorption modulators and photodetectors on III-V CMOS photonics platform by quantum well intermixing;Optics Express;2022-06-10
2. Active-passive Integration on III-V-OI Platform using Quantum Well Intermixing;Conference on Lasers and Electro-Optics;2020
3. Heterogeneous CMOS Photonics Based on SiGe/Ge and III–V Semiconductors Integrated on Si Platform;IEEE Journal of Selected Topics in Quantum Electronics;2017-05
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