Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch using electron beam lithography with chemically amplified resist process: IV. Comparison with experimental results-Reference-Cited by-同舟云学术

Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch using electron beam lithography with chemically amplified resist process: IV. Comparison with experimental results

Published:2016-04-04 Issue:5 Volume:55 Page:056503
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kozawa Takahiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=5/a=056503/pdf

Reference32 articles.

1. Chemical amplification in the design of dry developing resist materials

2. Chemical Amplification Resists for Microlithography

3. High performance mask fabrication process for the next-generation mask production

4. EUV resist materials design for 15nm half pitch and below

5. Evaluation of EUV resist performance with interference lithography towards 11 nm half-pitch and beyond

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