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Robust 600 V GaN high electron mobility transistor technology on GaN-on-Si with 400 V, 5 µs load-short-circuit withstand capability

  • Published:2016-02-24 Issue:4S Volume:55 Page:04EG01
  • ISSN:0021-4922
  • Container-title:Japanese Journal of Applied Physics
  • language:
  • Short-container-title:Jpn. J. Appl. Phys.

Author:

Nagahisa Tetsuzo,Ichijoh Hisao,Suzuki Takamitsu,Yudin Alex,Adan Alberto O.,Kubo Masaru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Short-Circuit Capability with GaN HEMTs : Invited;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03

2. Estimation of Short Circuit Capability of GaN HEMTs Using Transient Measurement;IEEE Electron Device Letters;2021-08

3. Short-Circuit Capability Demonstrated for GaN Power Switches;2021 IEEE Applied Power Electronics Conference and Exposition (APEC);2021-06-14

4. Recent progress of physical failure analysis of GaN HEMTs;Journal of Semiconductors;2021-05-01

5. Investigation on the Short-Circuit Oscillation of Cascode GaN HEMTs;IEEE Transactions on Power Electronics;2020-06
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