SiN etching characteristics of Ar/CH3F/O2plasma and dependence on SiN film density
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=8/a=086502/pdf
Reference55 articles.
1. Ion and neutral transportation consideration in etching of thin Si[sub 3]N[sub 4] in high aspect ratio structures for aspect ratio independent etching
2. Highly selective etching of silicon nitride to physical-vapor-deposited a-C mask in dual-frequency capacitively coupled CH2F2∕H2 plasmas
3. Ultrahigh selective etching of Si3N4 films over SiO2 films for silicon nitride gate spacer etching
4. Infinitely high etch selectivity during CH2F2/H2 dual-frequency capacitively coupled plasma etching of silicon nitride to chemical vapor-deposited a-C
5. Silicon nitride hardmask fabrication using a cyclic CHF3-based reactive ion etching process for vertical profile nanostructures
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3. Atomic layer etching of silicon nitride film by oxygen gas cluster ion beam with acetylacetone;Japanese Journal of Applied Physics;2023-06-01
4. Vertical sidewall of silicon nitride mask and smooth surface of etched-silicon simultaneously obtained using CHF3/O2 inductively coupled plasma;Vacuum;2023-01
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