Improving high-resistance state uniformity and leakage current for polyimide-based resistive switching memory by rubbing post-treatment-Reference-Cited by-同舟云学术

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Improving high-resistance state uniformity and leakage current for polyimide-based resistive switching memory by rubbing post-treatment

Published:2015-11-13 Issue:1S Volume:55 Page:01AA09
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hsiao Yu-Ping,Yang Wen-Luh,Wu Chi-Chang,Lin Li-Min,Chin Fun-Tat,Lin Yu-Hsien,Yang Ke-Luen

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference32 articles.

1. Effects of floating-gate interference on NAND flash memory cell operation

2. A Zeroing Cell-to-Cell Interference Page Architecture With Temporary LSB Storing and Parallel MSB Program Scheme for MLC NAND Flash Memories

3. Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness

4. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Chemical Displacing Time for the Characteristics of the Nonvolatile Oxide-based Resistive Memory Devices;2023 Sixth International Symposium on Computer, Consumer and Control (IS3C);2023-06

2. Impact of Rubbing Technique on Polyimide-based Resistive Random Access Memories;Journal of Physics: Conference Series;2021-09-01

3. Effects of the Molecular Chain Length of Polyimide on the Characteristics of Organic Resistive Random Access Memories;IEEE Transactions on Electron Devices;2020-01

4. Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique;Materials;2018-02-09

5. Circuit-level simulation of resistive-switching random-access memory cross-point array based on a highly reliable compact model;Journal of Computational Electronics;2017-12-07

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