p-Cu2O/SiCxOy/n-SiC/n-Si memory diode having resistive nonvolatile memory and rectifying behaviors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=7/a=074203/pdf
Reference32 articles.
1. Electric-pulse-induced reversible resistance change effect in magnetoresistive films
2. SiOx/3C-SiC/Si Metal–Insulator–Semiconductor Nonvolatile Resistance Memory
3. An Ultrasonic Motor for Use at Ultralow Temperature Using Lead Magnesium Niobate–Lead Titanate Single Crystal
4. An Ultrasonic Motor for Use at Ultralow Temperature Using Lead Magnesium Niobate–Lead Titanate Single Crystal
5. Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface
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3. Crystallinity control of SiC grown on Si by sputtering method;Journal of Crystal Growth;2017-04
4. p-Cu2O/SiOx/n-SiC/n-Si memory diode fabricated with room-temperature-sputtered n-SiC and SiOx;Japanese Journal of Applied Physics;2016-11-07
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