Radio-frequency plasma-excited molecular beam epitaxy growth of GaN on graphene/Si(100) substrates-Reference-Cited by-同舟云学术

Radio-frequency plasma-excited molecular beam epitaxy growth of GaN on graphene/Si(100) substrates

Published:2014-06-11 Issue:7 Volume:7 Page:071001
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Araki Tsutomu,Uchimura Satoru,Sakaguchi Junichi,Nanishi Yasushi,Fujishima Tatsuya,Hsu Allen,Kim Ki Kang,Palacios Tomás,Pesquera Amaia,Centeno Alba,Zurutuza Amaia

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/7/i=7/a=071001/pdf

Reference14 articles.

1. Enhanced optical emission from GaN films grown on a silicon substrate

2. GaN heteroepitaxy on Si(001)

3. Growth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxy

4. Structural and Electrical Characterization of GaN Thin Films on Si(100)

5. Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs

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