Polarization modulation in GaN-based double-barrier resonant tunneling diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=9/a=095201/pdf
Reference16 articles.
1. Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions
2. AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy
3. Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes
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1. III-nitrides based resonant tunneling diodes;Journal of Physics D: Applied Physics;2020-04-26
2. A GaN/InGaN/AlGaN MQW RTD for versatile MVL applications with improved logic stability;Journal of Semiconductors;2018-07
3. Giant peak to valley ratio in a GaN based resonant tunnel diode with barrier width modulation;Superlattices and Microstructures;2016-10
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