Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions-Reference-Cited by-同舟云学术

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Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions

Published:2013-08-01 Issue:8S Volume:52 Page:08JN17
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Meneghini Matteo,Zanandrea Alberto,Rampazzo Fabiana,Stocco Antonio,Bertin Marco,Cibin Giulia,Pogany Dionyz,Zanoni Enrico,Meneghesso Gaudenzio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference14 articles.

1. Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors

2. Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique

3. Punch-through in short-channel AlGaN/GaN HFETs

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research Progress of Physical Failure Analysis Techniques for Gallium Nitride High Electron Mobility Transistors;Applied Physics;2023

2. Investigation of ON-State Breakdown Mechanism in AlGaN/GaN HEMTs with AlGaN Back Barrier;Electronics;2022-04-22

3. Interplay of Various Charge Sources in AlGaN/GaN Epi-Stack Governing HEMT Breakdown;IEEE Transactions on Electron Devices;2021-05

4. Mechanism and enhancement of the near-threshold low OFF-state breakdown voltage in gallium nitride high electron mobility transistors;Japanese Journal of Applied Physics;2019-04-12

5. Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate;Energies;2017-01-25

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