High Quality SiO2/Al2O3Gate Stack for GaN Metal–Oxide–Semiconductor Field-Effect Transistor-Reference-Cited by-同舟云学术

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High Quality SiO2/Al2O3Gate Stack for GaN Metal–Oxide–Semiconductor Field-Effect Transistor

Published:2013-04-01 Issue:4S Volume:52 Page:04CF09
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kambayashi Hiroshi,Nomura Takehiko,Ueda Hirokazu,Harada Katsushige,Morozumi Yuichiro,Hasebe Kazuhide,Teramoto Akinobu,Sugawa Shigetoshi,Ohmi Tadahiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference41 articles.

1. GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

2. High-voltage normally off GaN MOSFETs on sapphire substrates

3. Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates

4. GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm2/(V s) Channel Mobility

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1. High-κ Oxide Charge Engineering on GaN for Normally Off HEMTs;Journal of Electronic Materials;2024-05-03

2. Thermally hardened AlGaN/GaN MIS-HEMTs based on multilayer dielectrics and silicon nitride passivation;Applied Physics Letters;2023-03-13

3. Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices;Materials;2022-01-21

4. Dipole Formation and Electrical Properties According to SiO2 Layer Thickness at an Al2O3/SiO2 Interface;The Journal of Physical Chemistry C;2021-06-25

5. Properties of Hafnium and Aluminium Silicates Coatings Obtained by PLD;Coatings;2021-06-23

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