Thermal Conductivity of Amorphous Indium–Gallium–Zinc Oxide Thin Films-Reference-Cited by-同舟云学术

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Thermal Conductivity of Amorphous Indium–Gallium–Zinc Oxide Thin Films

Published:2013-02-01 Issue:2 Volume:6 Page:021101
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Yoshikawa Toru,Yagi Takashi,Oka Nobuto,Jia Junjun,Yamashita Yuichiro,Hattori Koichiro,Seino Yutaka,Taketoshi Naoyuki,Baba Tetsuya,Shigesato Yuzo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/6/i=2/a=021101/pdf

Reference22 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment andab initiocalculations

3. DC sputter deposition of amorphous indium–gallium–zinc–oxide (a-IGZO) films with H2O introduction

4. Transparent, high mobility InGaZnO thin films deposited by PLD

5. High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates

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