High-Quality AlN Layer Homoepitaxially Grown on Nitrideda-Plane Sapphire Using a Ga–Al Flux
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/6/i=9/a=091001/pdf
Reference18 articles.
1. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
2. Deep ultraviolet light-emitting diodes
3. 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire
4. Similarities and differences in sublimation growth of SiC and AlN
5. Growth of AlN single crystalline boules
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