Enhanced Performance of GaN-Based Light-Emitting Diodes by Using Al Mirror and Atomic Layer Deposition-TiO2/Al2O3Distributed Bragg Reflector Backside Reflector with Patterned Sapphire Substrate-Reference-Cited by-同舟云学术

Enhanced Performance of GaN-Based Light-Emitting Diodes by Using Al Mirror and Atomic Layer Deposition-TiO2/Al2O3Distributed Bragg Reflector Backside Reflector with Patterned Sapphire Substrate

Published:2013-02-01 Issue:2 Volume:6 Page:022101
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Chen Hongjun,Guo Hao,Zhang Peiyuan,Zhang Xiong,Liu Honggang,Wang Shengkai,Cui Yiping

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/6/i=2/a=022101/pdf

Reference25 articles.

1. Fabrication of LED based on III–V nitride and its applications

2. Enhanced Emission Efficiency of GaN-Based Flip-Chip Light-Emitting Diodes by Surface Plasmons in Silver Disks

3. Effects of p-Electrode Reflectivity on Extraction Efficiency of Nitride-Based Light-Emitting Diodes

4. Enhancement of light extraction from light emitting diodes

5. Effect of Surface Texture and Backside Patterned Reflector on the AlGaInP Light-Emitting Diode: High Extraction of Waveguided Light

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