A High-Temperature Nitrogen Plasma Etching for Preserving Smooth and Stoichiometric GaN Surface
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/6/i=5/a=056201/pdf
Reference35 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
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4. Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes
5. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
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