Design of Shallow Acceptors in GaN through Zinc–Magnium Codoping: First-Principles Calculation-Reference-Cited by-同舟云学术

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Design of Shallow Acceptors in GaN through Zinc–Magnium Codoping: First-Principles Calculation

Published:2013-04-01 Issue:4 Volume:6 Page:042104
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Liu Zhiqiang,Melton Andrew G.,Yi Xiaoyan,Wang Jianwei,Kucukgok Bahadir,Kang Jun,Lu Na,Wang Junxi,Li Jinmin,Ferguson Ian

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/6/i=4/a=042104/pdf

Reference40 articles.

1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

2. Solid-State Light Sources Getting Smart

3. Single gallium nitride nanowire lasers

4. Design and characterization of GaN∕InGaN solar cells

5. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

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1. Towards n-type conductivity in hexagonal boron nitride;Nature Communications;2022-06-03

2. Influence of oxygen-related defects on the electronic structure of GaN;Japanese Journal of Applied Physics;2022-05-24

3. Impurity resonant state p-doping layer for high-efficiency nitride-based light-emitting diodes;Semiconductor Science and Technology;2018-10-11

4. AlGaN photonics: recent advances in materials and ultraviolet devices;Advances in Optics and Photonics;2018-01-17

5. Maximum Limits on External Quantum Efficiencies in Bare LEDs;IEEE Transactions on Electron Devices;2017-04

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