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GaN light-emitting diodes with an Al-coated graphene layer as a transparent electrode

  • Published:2014-07-18 Issue:8 Volume:7 Page:082103
  • ISSN:1882-0778
  • Container-title:Applied Physics Express
  • language:
  • Short-container-title:Appl. Phys. Express

Author:

Xu Qiang,Yang Muchuan,Cheng Qijin,Zhong JinXiang,Wu Shaoxiong,Zhang Zifeng,Cai Weiwei,Zhang Fengyan,Wu Zhengyun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. X-ray in situ observation of graphene precipitating directly on sapphire substrate with and without Ti capping layer;Journal of Crystal Growth;2020-11

2. Bulk GaN alpha-particle detector with large depletion region and improved energy resolution;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2017-03

3. Scanning tunneling microscopy of a graphene layer placed on a micro structured substrate;Journal of Physics: Conference Series;2017-03

4. Direct growth of multilayer graphene by precipitation using W capping layer;Japanese Journal of Applied Physics;2016-09-02

5. Influence of Substrate Microstructure on the Transport Properties of CVD-Graphene;ACS Applied Materials & Interfaces;2015-12-24
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