Characteristics of GaN-based LED fabricated on a GaN-on-silicon platform
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=8/a=082102/pdf
Reference22 articles.
1. Analysis of position-dependent light extraction of GaN-based LEDs
2. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
3. III-nitride photonic-crystal light-emitting diodes with high extraction efficiency
4. High-Speed GaN-Based Blue Light-Emitting Diodes With Gallium-Doped ZnO Current Spreading Layer
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