Formation of high-quality Ge1−xSnx layer on Ge(110) substrate with strain-induced confinement of stacking faults at Ge1−xSnx/Ge interfaces
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=6/a=061301/pdf
Reference14 articles.
1. Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance
2. Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
3. A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors
4. Molecular dynamics investigation of the MBE growth of Si on Si{110}
5. Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(110) substrates
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth and applications of GeSn-related group-IV semiconductor materials;Science and Technology of Advanced Materials;2015-07-16
2. Investigation on the effective mass of Ge1−xSnxalloys and the transferred-electron effect;Applied Physics Express;2015-02-26
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