Investigation of InGaAs thermophotovoltaic cells under blackbody radiation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=9/a=096601/pdf
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1. GaSb booster cells for over 30% efficient solar‐cell stacks
2. N- type doping of gallium antimonide and aluminum antimonide grown by molecular beam epitaxy using lead telluride as a tellurium dopant source
3. Electrical and microstructure analysis of nickel-based low-resistance ohmic contacts to n-GaSb
4. Front Matter: Volume 9140
5. 0.6-eV bandgap In/sub 0.69/Ga/sub 0.31/As thermophotovoltaic devices grown on InAs/sub y/P/sub 1-y/ step-graded buffers by molecular beam epitaxy
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