2.4 µm InP-based antimony-free triangular quantum well lasers in continuous-wave operation above room temperature
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=3/a=032701/pdf
Reference18 articles.
1. Lasers and photodetectors for mid-infrared 2–3 μm applications
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5. Room-temperature 3.73 µm GaSb-based type-I quantum-well lasers with quinternary barriers
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1. Extended emission wavelength beyond 2.2 μ m in strained multiple-quantum-well laser using InGaAsSb material grown on InP substrate;Applied Physics Letters;2023-04-03
2. Toward GaSb-Based Monolithically Integrated Widely-Tunable Lasers for Extended Short- and Mid-Wave Infrared Wavelengths;IEEE Journal of Quantum Electronics;2023-02
3. Room-temperature continuous-wave InP-based 2.01 µm microcavity lasers in whispering-gallery modes with InGaAsSb quantum well;Chinese Optics Letters;2023
4. Effect of Ridge Width on the Lasing Characteristics of Triangular and Rectangular InAs/In0.53Ga0.47As Quantum Well Lasers;Frontiers in Materials;2022-01-26
5. InAs triangular quantum wells grown on InP/SiO2/Si heterogeneous substrate for mid-infrared emission;Materials Science in Semiconductor Processing;2021-12
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